Thin film magnetic head and magnetic recording apparatus having a lowered coil resistance value, reduced generated heat, and high-frequency

ABSTRACT

The invention is directed to improvement of a thin film magnetic head of a magnetic recording apparatus. The magnetic head includes a write element, in which a first coil and a second coil are provided on a first insulating film formed on one surface of a first magnetic film and surround in a spiral form a back gap portion. One of the first coil and the second coil is fitted into the space between coil turns of the other, insulated from the coil turns of the other by a second insulating film, and the first and second coils are connected to each other so as to generate magnetic flux in the same direction. One of the first coil and the second coil has a side surface being adjacent to the pole portion with the second insulating film and another side surface being adjacent to the back gap portion with the second insulating film, and each of the side surfaces has a taper angle making the sectional shape of the coil narrower in the lower part and wider in the upper part. The upper surfaces of the first and second coils form the same plane.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin film magnetic head, a magneticrecording apparatus using the same and a method for manufacturing thesame, and particularly to improvement of a thin film magnetic head.

2. Discussion of Background

In a write element provided inside a thin film magnetic head, a firstpole portion and a second pole portion faces each other with a gap filmbetween them at an air bearing surface (hereinafter, referred to as ABS)side (hereinafter, referred to as the front part), and a back gap isformed by joining a lower magnetic film connected to the first poleportion and an upper magnetic film connected to the second pole portionat the rear part opposite to the ABS. Around the back gap, a flat coilsurrounding the back gap is positioned on a plane which is in parallelwith the surfaces of the lower magnetic film and the upper magnetic filmand nearly perpendicular to the ABS. The coil is formed generally by aframe plating method.

In a thin film magnetic head of this type, it is known that the shorterthe yoke length YL from a back gap to a pole portion is, the moreexcellent high-frequency characteristic is obtained. In order to shortenthe yoke length, it is necessary to reduce the number of turns of a coilpositioned between the back gap and the pole portion or to decrease thewidth of the coil without reducing the number of turns.

However, since the number of turns of a coil is determined by a magnetomotive force required, reducing the number of coil turns to shorten theyoke length YL has a limit.

On the other hand, in case of reducing the width of a coil withoutdecreasing the number of turns, the electric resistance of the coilincreases, so a temperature rise due to heat generation increases duringa write operation. When the temperature rise increases, the first andsecond pole portions thermally expand to cause a thermal protrusion thatthe pole portions swell on the ABS. When a thermal protrusion occurs,the part where the thermal protrusion has occurred comes into contactwith a magnetic recording medium and causes a head crash or causesdamage or destruction of a magnetic record on the magnetic recordingmedium, so a thermal protrusion must be strictly avoided. If it isimpossible to avoid a thermal protrusion, the floating height of a thinfilm magnetic head must be increased after all, which makes itimpossible to meet a demand for a low floating height for a highrecording density.

As a prior art which might be effective for solving the above-mentionedproblem, there is U.S. Pat. No. 4,416,056. This prior art discloses atechnique of patterning to form first conductors of the first layerarranged at fixed spaces on a plane, and then patterning to form secondconductors of the first layer so that they fill up said spaces,insulated from said first conductors by an insulating film.

However, since this prior art discloses a structure in which the uppersurfaces of the first conductors are covered with an insulating film,the sectional areas of the first conductors decrease by presence of theinsulating film. In short, the above-mentioned prior art does notdisclose a technique of maximizing the sectional areas of the firstconductors.

And the above-mentioned prior art fails to disclose the relation ofconductors relative to a pole portion and a back gap. Although theincrease in wiring density of conductors contributes to shortening ayoke length YL, if the space between a conductor and each of a poleportion and a back gap is not made narrow, shortening the yoke length YLhas a limit clearly.

Further, it is not necessarily preferable that the space between aconductor and each of a pole portion and a back gap is simply madenarrow. The reason is that when the space between a conductor and eachof a pole portion and a back gap is made narrow, there is a risk thatthe space which has not completely been filled up may make a keyhole.

As another prior art, there is U.S. Pat. No. 6,226,860B1. This prior artfails to disclose a means of solving the above-mentioned problem aswell.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a thin film magnetichead and a magnetic recording device in which a coil resistance value islowered and the quantity of generated heat is reduced as keeping thenumber of coil turns.

Another object of the present invention is to provide a thin filmmagnetic head and a magnetic recording device being improved inhigh-frequency characteristic by shortening a yoke length.

In order to attain the above-mentioned objects, in a thin film magnetichead according to the present invention, a first coil and a second coilincluded in a write element surround in a spiral form a back gap portionon one surface of a first insulating film formed on the lower magneticfilm. One of the first and second coils is fitted into the space betweencoil turns of the other, insulated from the coil turns of the other by asecond insulating film.

The second insulating film between the first coil and the second coilcan be formed as a very thin Al₂O₃ film of about 0.1 μm in thickness byapplying a chemical vapor deposition (hereinafter, referred to as CVD)or the like. Therefore, it is possible to maximize the sectional area ofthe first and second coils between the back gap portion and the firstpole portion, thereby decreasing the resistance of the coils and thequantity of generated heat as keeping the number of coil turns. Thismakes it possible to suppress occurrence of a thermal protrusion in apole portion, thereby avoiding a head crash, damage and destruction ofmagnetic records on a magnetic recording medium, and thus meeting ademand for a low floating height for a high recording density.

Since one of the first coil and the second coil is fitted into the spacebetween coil turns of the other, insulated from the coil turns of theother by the second insulating film, the wiring density of coilconductors is made high. This makes it possible to shorten the yokelength YL as keeping the same number of coil turns.

The first coil and the second coil are connected to each other so as togenerate magnetic flux in the same direction. Since the first coil andthe second coil are the same in winding direction, it is possible togenerate magnetic flux in the same direction by making aseries-connection structure in which the inner end of the first coil isconnected to the outer end of the second coil. Alternatively, magneticflux may be generated in the same direction by connecting the first coilto the second coil in parallel. In this case, the number of coil turnsdecreases but reduction in coil resistance is achieved.

One of the first coil and the second coil has a side surface adjacent tothe pole portion and another side surface adjacent to the back gapportion, and each of the side surfaces having a taper angle that makesthe sectional shape of the coil turn narrower in the lower part andwider in the upper part. According to this structure, the coil adjacentto the pole portion or the back gap portion can be formed without makinga keyhole, and consequently the reliability is improved.

Furthermore, since the coil is separated from the pole portion or theback gap portion by the second insulating film which can become a verythin film of about 0.1 μm by applying CVD or the like, it is possible tomore promote shortening of the yoke length YL.

The upper surfaces of the first coil and the second coil form the sameplane. This structure makes it possible to form a common thirdinsulating film on the upper surfaces of the first and second coils, soan insulating structure for the upper surfaces of the first and secondcoils is simplified. And this structure provides a stable base forproviding another coil above the first and second coils, so said anothercoil can be formed as a high-accuracy pattern.

In case of providing another coil above the first and second coils, theupper surfaces of the pole piece and the back gap piece are also made toform the same plane as the upper surfaces of the first and second coilsin addition to flattening the first and second coils. By doing so, asecond pole piece and a second back gap piece required in case ofproviding another coil can be formed as a high-accuracy pattern on theflattened upper surfaces of the first pole piece and the back gap piece.

Preferably, the first coil has a taper angle making its sectional shapewider in the lower part and narrower in the upper part, and the secondcoil has a taper angle making its sectional shape narrower in the lowerpart and wider in the upper part. According to this structure, byadopting a process of forming the second coil after forming the firstcoil, it is possible to avoid occurrence of a keyhole when forming thesecond coil. Consequently, the reliability is improved.

It is preferable that the taper angles are equal to or more than 80degrees and less than 90 degrees in relation to the flat surface of thelower magnetic film. In this case, the first coil is a plating film andis formed on the first insulating film formed on the flat surface of thelower magnetic film. The second coil is also a plating film and isformed on the second insulating film in the space between coil turns ofthe first coil. The second insulating film is formed on the bottom faceand both side faces of the space.

A thin film magnetic head according to the present invention maycomprise a third coil. The third coil is provided above the first coiland the second coil, insulated from the first coil and the second coilby a third insulating film. The third coil surrounds in a spiral form aback gap portion on the surface of the third insulating film and isconnected in series with the first and second coils so as to generatemagnetic flux in the same direction as the first and second coils.According to this structure, the number of coil turns is increased bythe additional third coil and consequently a magneto motive force for awrite operation is increased.

Further, a thin film magnetic head according to the present inventionmay comprise a third coil and a fourth coil. The third coil and thefourth coil are provided above the first coil and the second coil,insulated from the first coil and the second coil by a third insulatingfilm. The third and fourth coils surround in a spiral form the back gapportion on the surface of the third insulating film, and one of thethird and fourth coils is fitted into the space between coil turns ofthe other, insulated from the coil turns of the other by a fourthinsulating film.

The outermost coil turn of the third coil or the fourth coil is adjacentto the pole portion with the fourth insulating film, and the innermostcoil turn of the third coil or the fourth coil is adjacent to the backgap portion with the fourth insulating film.

In a thin film magnetic head of the above-mentioned aspect, the effectdescribed with regard to the first aspect is provided and, moreover, thenumber of coil turns is increased due to the additional third and fourthcoils. Consequently, a magneto motive force for a write operation isincreased.

Preferably, one of the third coil and the fourth coil has a side surfacebeing adjacent to the pole portion or the back gap portion with thefourth insulating film, the side surface having a taper angle that makesthe sectional shape of the coil narrower in the lower part and wider inthe upper part. According to this structure, the coil adjacent to thepole portion or the back gap portion can be formed without making akeyhole, and consequently the reliability is improved.

Further, since the coil is separated from the pole portion or the backgap portion by the fourth insulating film which can become a very thinfilm of about 0.1 μm by applying a CVD or the like, it is possible toshorten the yoke length YL, thereby providing improvement inhigh-frequency characteristic.

As a concrete aspect, the third coil may have a taper angle making itssectional shape wider in the lower part and narrower in the upper part,and the fourth coil may have a taper angle making its sectional shapenarrower in the lower part and wider in the upper part. According tothis structure, by adopting a process of forming the fourth coil afterforming the third coil, it is possible to avoid occurrence of a keyholewhen forming the fourth coil. Consequently, the reliability is improved.

It is preferable that the taper angles are equal to or more than 80degrees and less than 90 degrees in relation to the surface of the thirdinsulating film. The third coil is a plating film and is formed on thethird insulating film. The fourth coil is also a plating film and isformed on the fourth insulating film in the space between coil turns ofthe third coil. The fourth insulating film is formed on the bottom faceand both side faces of the space.

A thin film magnetic head according to the first aspect having the firstcoil and the second coil out can be manufactured by the followingprocess.

First, a first coil, a first pole piece and a first back gap piece areformed on a first insulating film formed on the surface of the lowermagnetic film. Each of them is formed so as to have a taper angle makingits sectional shape wider in the lower part and narrower in the upperpart.

Next, a second insulating film is formed on the first coil, the firstpole piece and the first back gap piece, and further a first seed filmis formed on the second insulating film.

Next, a plating film for a second coil is grown on the first seed filmin an area where the second coil is to be formed, so as to fill up thespaces between the first pole piece and the outermost coil turn of thefirst coil, between coil turns of the first coil and between theinnermost coil turn of the first coil and the first back gap piece.

Next, the plating film is flattened by polishing so that a pattern ofthe second coil is obtained.

A process for manufacturing a thin film magnetic head having a thirdcoil in addition to a first coil and a second coil is as follows.

First, after performing the flattening process for obtaining the secondcoil, a third insulating film is pattern-formed on the flattened surfaceformed by the flattening process. The third insulating film is formed soas to have a pattern which covers an area slightly wider than an areawhere a third coil is formed and does not cover the first pole piece andthe first back gap piece.

Next, the third coil is formed on the third insulating film, a secondpole piece is formed on the first pole piece, and a second back gappiece is formed on the first back gap piece.

A process for manufacturing a thin film magnetic head having a thirdcoil and a fourth coil in addition to a first coil and a second coil isas follows.

First, after the third coil, the second pole piece and the second backgap piece are formed, a fourth insulating film is formed on the surfacesof the third coil, the second pole piece and the second back gap pieceand the vicinity thereof, and further a second seed film is formed onthe fourth insulating film.

Next, a plating film for the fourth coil is grown on the second seedfilm in an area where the fourth coil is to be formed, so as to fill upthe spaces between the second pole piece and the outermost coil turn ofthe third coil, between coil turns of the third coil and between theinnermost coil turn of the third coil and the second back gap piece.

Next, an insulating film covering the plating film is formed, andthereafter the plating film is flattened by polishing so that a patternof the fourth coil is obtained.

The third coil, the second pole piece and the second back gap portioneach can be formed so as to have a taper angle making its sectionalshape wider in the lower part and narrower in the upper part. In thiscase, it is desirable that the third coil is formed by an electrolyticplating method of Cu and the plating film for the fourth coil is formedby an electrolytic plating method of Cu.

The manufacturing method according to the above-mentioned three aspectsmay include the following common technological matters.

The first and second seed films may comprise a Cu film formed bysputtering and a Cu film formed by CVD.

The second and fourth coils each may be formed by applyingCu-electrolytic plating onto the second seed film which comprises a Cufilm formed by sputtering and a Cu film formed by CVD.

The first to fourth insulating films each are an alumina-CVD film formedby an atomic layer method, but they are not limited to this. In thiscase, the insulating films each are within 50 nm to 150 nm in thickness.

The above-mentioned taper angles can be determined by selecting afocusing position in a photolithography process or can also bedetermined by an ion beam etching method.

The present invention further discloses also a magnetic head devicehaving a thin film magnetic head and a head supporting device combinedwith each other, and a magnetic recording/reproducing apparatus havingthis magnetic head device and a magnetic recording medium (hard disk)combined with each other. Other objects, structures and advantages ofthe present invention are described in more detail with reference to theaccompanying drawings. The drawings are only exemplifications.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram of a thin film magnetic head according to thepresent invention, seen from the ABS side.

FIG. 2 is a sectional view of the thin film magnetic head shown in FIG.1.

FIG. 3 is a magnified sectional view of an electromagnetic converterportion of the thin film magnetic head shown in FIGS. 1 and 2.

FIG. 4 is a diagram of the electromagnetic converter portion shown inFIG. 3, seen from the ABS side.

FIG. 5 is a perspective view showing a write element part cut out fromthe electromagnetic converter portion shown in FIGS. 3 and 4.

FIG. 6 is a plan view showing a coil structure of the write element partin the electromagnetic converter portion shown in FIGS. 3 to 5.

FIG. 7 is a magnified sectional view of another embodiment of anelectromagnetic converter portion of a thin film magnetic head accordingto the present invention.

FIG. 8 is a diagram of the electromagnetic converter portion shown inFIG. 7, seen from the ABS side.

FIG. 9 is a magnified sectional view of a further other embodiment of anelectromagnetic converter portion of a thin film magnetic head accordingto the present invention.

FIG. 10 is a diagram of the electromagnetic converter portion shown inFIG. 9 seen from the ABS side.

FIG. 11 is a diagram showing a process of manufacturing a thin filmmagnetic head having the electromagnetic converter portion shown inFIGS. 3 to 6.

FIG. 12 is a diagram showing a process after the process shown in FIG.11.

FIG. 13 is a diagram showing a process after the process shown in FIG.12.

FIG. 14 is a diagram showing a process after the process shown in FIG.13.

FIG. 15 is a diagram showing a process after the process shown in FIG.14.

FIG. 16 is a diagram showing a process after the process shown in FIG.15.

FIG. 17 is a diagram showing a process after the process shown in FIG.16.

FIG. 18 is a diagram showing a process after the process shown in FIG.17.

FIG. 19 is a diagram showing a process after the process shown in FIG.18.

FIG. 20 is a diagram showing a process after the process shown in FIG.19.

FIG. 21 is a diagram showing a process after the process shown in FIG.20.

FIG. 22 is a diagram showing a process after the process shown in FIG.21.

FIG. 23 is a diagram showing a process after the process shown in FIG.22.

FIG. 24 is a diagram showing a process after the process shown in FIG.23.

FIG. 25 is a diagram showing a process after the process shown in FIG.24.

FIG. 26 is a diagram showing a process after the process shown in FIG.25.

FIG. 27 is a diagram showing a process after the process shown in FIG.26.

FIG. 28 is a diagram showing a process after the process shown in FIG.27.

FIG. 29 is a diagram showing a process after the process shown in FIG.28.

FIG. 30 is a diagram showing a process after the process shown in FIG.29.

FIG. 31 is a diagram showing a process after the process shown in FIG.30.

FIG. 32 is a diagram showing a process after the process shown in FIG.31.

FIG. 33 is a diagram showing a process after the process shown in FIG.32.

FIG. 34 is a diagram showing a process after the process shown in FIG.33.

FIG. 35 is a diagram showing a process after the process shown in FIG.34.

FIG. 36 is a diagram showing a process after the process shown in FIG.35.

FIG. 37 is a diagram showing a process after the process shown in FIG.36.

FIG. 38 is a diagram showing a process after the process shown in FIG.37.

FIG. 39 is a diagram showing a process after the process shown in FIG.38.

FIG. 40 is a diagram of a write element obtained through the processshown in FIG. 39, seen from the ABS side.

FIG. 41 is a diagram showing a process after the process shown in FIGS.39 and 40.

FIG. 42 is a diagram of a write element obtained through the processshown in FIG. 41, seen from the ABS side.

FIG. 43 is a diagram showing a process after the process shown in FIGS.41 and 42.

FIG. 44 is a diagram of a write element obtained through the processshown in FIG. 43, seen from the ABS side.

FIG. 45 is a diagram showing a process of manufacturing a thin filmmagnetic head having the electromagnetic converter portion shown inFIGS. 7 and 8.

FIG. 46 is a diagram showing a process after the process shown in FIG.45.

FIG. 47 is a diagram showing a process after the process shown in FIG.46.

FIG. 48 is a diagram showing a process after the process shown in FIG.47.

FIG. 49 is a diagram showing a process after the process shown in FIG.48.

FIG. 50 is a diagram showing a process after the process shown in FIG.49.

FIG. 51 is a diagram showing a process after the process shown in FIG.50.

FIG. 52 is a diagram showing a process after the process shown in FIG.51.

FIG. 53 is a diagram showing a process after the process shown in FIG.52.

FIG. 54 is a diagram showing a process after the process shown in FIG.53.

FIG. 55 is a diagram showing a process after the process shown in FIG.54.

FIG. 56 is a diagram showing a process after the process shown in FIG.55.

FIG. 57 is a diagram showing a process after the process shown in FIG.56.

FIG. 58 is a diagram showing a process after the process shown in FIG.57.

FIG. 59 is a diagram showing a process after the process shown in FIG.58.

FIG. 60 is a diagram showing a process after the process shown in FIG.59.

FIG. 61 is a diagram showing a process after the process shown in FIG.60.

FIG. 62 is a diagram showing a process after the process shown in FIG.61.

FIG. 63 is a diagram showing a process after the process shown in FIG.62.

FIG. 64 is a diagram showing a process after the process shown in FIG.63.

FIG. 65 is a diagram of a write element obtained through the processshown in FIG. 64, seen from the ABS side.

FIG. 66 is a diagram showing a process after the process shown in FIGS.64 and 65.

FIG. 67 is a diagram of a write element obtained through the processshown in FIG. 66, seen from the ABS side.

FIG. 68 is a diagram showing a process of manufacturing a thin filmmagnetic head having the electromagnetic converter portion shown inFIGS. 9 and 10.

FIG. 69 is a diagram showing a process after the process shown in FIG.68.

FIG. 70 is a diagram showing a process after the process shown in FIG.69.

FIG. 71 is a diagram showing a process after the process shown in FIG.70.

FIG. 72 is a diagram showing a process after the process shown in FIG.71.

FIG. 73 is a diagram showing a process after the process shown in FIG.72.

FIG. 74 is a diagram showing a process after the process shown in FIG.73.

FIG. 75 is a diagram showing a process after the process shown in FIG.74.

FIG. 76 is a diagram of a write element obtained through the processshown in FIG. 75, seen from the ABS side.

FIG. 77 is a diagram showing a process after the process shown in FIGS.75 and 76.

FIG. 78 is a diagram of a write element obtained through the processshown in FIG. 77, seen from the ABS side.

FIG. 79 is a diagram showing a process of providing a taper angle.

FIG. 80 is a diagram showing a process after the process shown in FIG.79.

FIG. 81 is a diagram showing a process after the process shown in FIG.80.

FIG. 82 is a diagram showing a process after the process shown in FIG.81.

FIG. 83 is a diagram showing a process after the process shown in FIG.82.

FIG. 84 is a front view of a magnetic head device having a thin filmmagnetic head according to the present invention.

FIG. 85 is a diagram of the magnetic head device shown in FIG. 84, seenfrom the bottom side (ABS side).

FIG. 86 is a schematic perspective view of a magneticrecording/reproducing apparatus obtained by combining a thin filmmagnetic head or a magnetic head device of the present invention with amagnetic recording medium.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

1. Thin Film Magnetic Head

Referring to FIGS. 1 to 4, a thin film magnetic head according to thepresent invention comprises a slider 5, a write element 2 and a readelement 3. The slider 5 is, for example, a ceramic structure having abase body 15 made of Al₂O₃—TiC or the like, with an insulating film 16of Al₂O₃, SiO₂ or the like provided on the surface thereof (see FIG. 3).The slider 5 has a geometrical shape for controlling a floatingcharacteristic in the surface facing a medium. As a representativeexample of such a geometrical shape, there is shown an example in whichthere are provided with a first step part 51, a second step part 52, athird step part 53, a fourth step part 54 and a fifth step part 55 on abase face 50 at the ABS side. The base face 50 becomes a negativepressure generating portion to an air flowing direction shown by arrowA, the second step part 52 and the third step part 53 form a step-shapedair bearing rising from the first step part 51. The surfaces of thesecond step part 52 and the third step part 53 form an ABS. The fourthstep part 54 stands up in the shape of a step from the base face 50 andthe fifth step part 55 stands up in the shape of a step from the fourthstep part 54. Electromagnetic converter elements 2 and 3 are provided inthe fifth step part 55.

The electromagnetic converter elements 2 and 3 comprise a write element2 and a read element 3. The write element 2 and the read element 3 areprovided at the air flowing out end (trailing edge) side when seeing inthe air flowing direction A.

Referring to FIGS. 3 and 4, the write element 2 comprises a lowermagnetic film 211, an upper magnetic films 221 and 222, a gap film 24made of alumina or the like, a first pole portion P1, a second poleportion P2, a first coil 231 and a second coil 232. The representations“lower” and “upper” in the lower magnetic film 211 and the uppermagnetic films 221, 222 are representations for only referring toillustrated embodiments, and the upper/lower relation in the lowermagnetic film 211 and the upper magnetic films 221, 222 may be invertedaccording to circumstances.

The lower magnetic film 211 is supported by an insulating film 34 andhas a substantially flat surface. The insulating film 34 is made of aninorganic material such as Al₂O₃, SiO₂, AlN or DLC. The upper magneticfilms 221, 222 and the lower magnetic film 211 face each other with aninner gap between them.

The lower magnetic film 211 and the upper magnetic films 221, 222 can bemade of one or more magnetic materials selected from NiFe, CoFe, CoFeN,CoNiFe, FeN, FeZrN and the like. The lower magnetic film 211 and theupper magnetic films 221, 222 each are determined within 0.25 to 3 μm inthickness, for example. Such lower magnetic film 211 and upper magneticfilms 221, 222 can be formed by a frame plating method.

In the illustrated embodiment, it is assumed that the lower magneticfilm 211 is made of CoFeN or CoNiFe. And when the lower magnetic film211 is called a first magnetic film, the upper magnetic films 221, 222have a multilayer structure of a second magnetic film 221 and a thirdmagnetic film 222. For convenience of description, in the followingdescription the lower magnetic film 211 is called a first magnetic film211 and two magnetic films forming the upper magnetic films 221, 222 arecalled a second magnetic film 221 and a third magnetic film 222,respectively. The second magnetic film 221 can be made of CoNiFe and thethird magnetic film 222 can be made of CoFeN being high in saturationmagnetic flux density.

The fore-end portions of the first magnetic film 211, the secondmagnetic film 221 and the third magnetic film 222 form parts of thefirst pole portion P1 and the second pole portion P2 facing each otherwith a very thin gap film 24 between them, and a write operation isperformed in the first pole portion P1 and the second pole portion P2.The gap film 24 is made of a non-magnetic metal film or an inorganicinsulating film such as alumina.

In the illustrated embodiment, the first pole portion P1 has a structurein which a pole piece 212, a pole piece 213 and a pole piece 214 aredeposited on the first magnetic film 211 in this order. The pole pieces212, 213 and 214 can be made of CoFeN or CoNiFe.

The second pole portion P2 has a structure in which a pole piece 223 isdeposited on the gap film 24, and a seventh pole piece formed out of anend part of the third magnetic film 222 and an eighth pole piece formedout of an end of the second magnetic film 221 are deposited in order onthe pole piece 223.

Referring to FIG. 4, an end part of the first magnetic film 211, thepole piece 212 and the pole piece 213 spread in the track widthdirection of the ABS. However, the pole piece 214 has the upper end partnarrowed in track width at both sides so that the upper end part has anarrow track width PW, and the gap film 24, the pole piece 223, an endpart of the third magnetic film 222 and an end part of the secondmagnetic film 221 which are deposited on the pole piece 214 have alsonearly the same narrow track width PW as the pole piece 214. Therefore,the narrow track width PW for high-density recording is obtained.

The second magnetic film 221 and the third magnetic film 222 extend tothe back of the ABS 52, 53 as holding an inner gap between the firstmagnetic film 211 and them, and are joined to the first magnetic film211 by back gap pieces 216, 217, 218 and 224. Consequently, a thin filmmagnetic circuit going through the first magnetic film 211, the secondmagnetic film 221, the third magnetic film 222 and the gap film 24 iscompleted.

The inner gap is filled up with insulating films 254 to 257, and theupper magnetic film comprised of the second magnetic film 221 and thethird magnetic film 222 is formed on the insulating film 257.

Next, referring to FIG. 6, the first and second coils 231 and 232surround the back gap pieces 216, 217, 218 and 224.

The first coil 231, in a spiral shape, is deposited on the surface of aninsulating film 251 formed on a flat surface of the first magnetic film211 and has a coil pattern wound in a flat form around an axisperpendicular to the surface of the insulating film 251. The first coil231 is made of a conductive metal material such as Cu(copper). Theinsulating film 251 is made of an inorganic insulating material such asAl₂O₃, SiO₂, AlN or DLC.

The second coil 232, in a spiral shape as well, is fitted into the spacebetween coil turns of the first coil 231, insulated from the coil turnsof the first coil 231 by an insulating film 252, and has a coil patternwound around the axis in a flat form. The second coil 232 is also madeof a conductive metal material such as Cu(copper). The insulating film252 is also made of an inorganic material such as Al₂O₃, SiO₂, AlN orDLC.

The periphery of the first coil 231 and the second coil 232 is filled upwith an insulating film 253 (see FIG. 3). The insulating film 253 isalso made of an inorganic material such as Al₂O₃, SiO₂, AlN or DLC.

The insulating film 252 between the first coil 231 and the second coil232 can be formed as a very thin Al₂O₃ film of about 0.1 μm in thicknessby applying CVD or the like. Therefore, it is possible to maximize thefirst coil 231 and the second coil 232 in sectional area between theback gap pieces 216 to 218, 224 and the pole portions P1, P2, therebydecreasing the coil resistance and the quantity of generated heat askeeping the number of coil turns. This makes it possible to suppressoccurrence of a thermal protrusion in the pole portions P1, P2 during awrite operation, thereby avoiding a head crash, damage and destructionof magnetic records on a magnetic recording medium, and thus meeting ademand for a low floating height for a high recording density.

Since the second coil 232 is fitted into the space between coil turns ofthe first coil 231, insulated from the coil turns of the first coil 231by the insulating film 252, the wiring density of coil conductors ismade high. This makes it possible to shorten the yoke length YL (seeFIG. 3) as keeping the same number of coil turns.

The first coil 231 and the second coil 232 are connected to each otherso as to generate magnetic flux in the same direction. Since the firstcoil 231 and the second coil 232 have the same winding direction, it ispossible to generate the magnetic flux in the same direction by making aseries-connection structure in which the inner end 281 of the first coil231 and the outer end 283 of the second coil 232 are connected to eachother by a connecting conductor 282. The outer end 286 of the first coil231 is connected to a terminal 284 by a connecting conductor 285, ledoutside by a lead conductor 291 and connected to a takeout electrode 29(see FIG. 1). The inner end 287 of the second coil 232 is connected to aterminal 289 by a connecting conductor 288, led outside by a leadconductor 292 and connected to a takeout electrode 30 (see FIG. 1).

Unlike the structure shown in FIG. 6, magnetic flux may be generated inthe same direction by connecting the first coil 231 and the second coil232 in parallel with each other. In this case, the number of coil turnsdecreases but reduction in coil resistance is achieved.

One of the first coil 231 and the second coil 232 has a side surfaceadjacent to the pole piece 212 forming the first pole P1, and anotherside surface adjacent to the back gap piece 216, each of the sidesurfaces having a taper angle that makes the sectional shape of the coilturn narrower in the lower part and wider in the upper part. In theembodiment illustrated, the second coil 232 has a side surface adjacentto the pole piece 212 forming the first pole portion P1, and anotherside surface being adjacent to the back gap piece 216, each of the sidesurfaces having a taper angle θ1 that makes the sectional shape of thecoil turn narrower in the lower part and wider in the upper part.

According to a structure having a taper angle θ1, the second coil 232adjacent to the pole piece 212 and the back gap piece 216 can be formedwithout making a keyhole, and consequently the reliability is improved.

Further, since the second coil 232 is separated from the pole piece 212and the back gap piece 216 by the insulating film 252 which can become avery thin film of about 0.1 μm in thickness by applying CVD or the like,it is possible to more promote shortening of the yoke length YL.

The upper surfaces of the first coil 231 and the second coil 232 formthe same plane. This structure makes it possible to form a commoninsulating film 254 on the upper surfaces of the first coil 231 and thesecond coil 232, so an insulating structure of the upper surfaces of thefirst coil 231 and the second coil 232 is simplified. And this structuremakes it possible to form a flat and stable base face on the first coil231 and the second coil 232 and thereafter form a high-accuracy pattern.

In the illustrated embodiment, the first coil 231 has a taper angle θ2making its sectional shape wider in the lower part and narrower in theupper part. Since the second coil 232 fills up the space between coilturns of the first coil 231, insulated from the coil turns of the firstcoil 231 by the insulating film 252, the second coil 232 has a sectionalshape corresponding with that of the first coil 231, and consequentlyhas a taper angle θ3 (=θ2) making its sectional shape narrower in thelower part and wider in the upper part. According to this structure, byadopting a process of forming the second coil 232 after forming thefirst coil 231, it is possible to avoid of occurrence of a keyhole whenforming the second coil 232. Consequently, the reliability is improved.

It is preferable that taper angles θ1, θ2 and θ3 are equal to or morethan 80 degrees and less than 90 degrees in relation to one surface ofthe first magnetic film 211 or the insulating film 251. In this case,the first coil 231 is a plating film and is formed on the insulatingfilm 251 formed on one surface of the first magnetic film 211. Thesecond coil 232 is also a plating film and is formed on the insulatingfilm 252 in the space between coil turns of the first coil 231. Theinsulating film 252 is formed on the bottom face and both side faces ofthe space.

A protective film 258 covers the whole write element 2. The protectivefilm 258 is made of an inorganic material such as Al₂O₃ or SiO₂.

In the vicinity of the read element 3, there are provided a first shieldfilm 31, an insulating film 32 and a second shield film 33. The firstshield film 31 and the second shield film 33 are made of NiFe or thelike. The first shield film 31 is formed on an insulating film 16 madeof Al₂O₃, SiO₂ or the like. The insulating film 16 is formed on a basebody 15 made of Al₂O₃—TiC or the like.

The read element 3 is provided inside the insulating film 32 between thefirst shield film 31 and the second shield film 33. The end face of theread element 3 comes out at the ABS 52, 53. The read element 3 includesa giant magnetoresistance effect element (GMR element). The GMR elementcan be formed of one of a spin valve film and a ferromagnetic tunneljunction element.

Next, another embodiment of a thin film magnetic head according to thepresent invention is described with reference to FIGS. 7 and 8. In FIGS.7 and 8, the same components as those shown in FIGS. 1 to 6 are giventhe same reference symbols. A thin film magnetic head of the illustratedembodiment comprises a first coil 231, a second coil 232 and a thirdcoil 233. The first coil 231 and the second coil 232 have the samestructure as the embodiment shown in FIGS. 1 to 6.

The third coil 233 is provided above the first coil 231 and the secondcoil 232, insulated from the first coil 231 and the second coil 232 byan insulating film 254, and surrounds in a spiral form a back gap piece217. The third coil 233 is connected in series with the first coil 231and the second coil 232 so as to generate magnetic flux in the samedirection as them. For example, in FIG. 6, the outer end of the thirdcoil 233 is connected to the outer end 283 of the second coil 232, andthe coil pattern of the third coil 233 is wound in the same direction asthat of the second coil 232, the inner end of the coil pattern beingconnected to the inner end 281 of the first coil 231.

In the embodiment of FIGS. 7 and 8, the coil turns of the third coil 233are insulated by an insulating film 271, and the insulating film 271 iscovered with an insulating film 255. The insulating film 271 may be madeof an organic insulating resin or inorganic insulating resin. Theembodiment shows an example with the insulating film 271 made of anorganic insulating resin. The insulating film 255 can be made of aninorganic material such as Al₂O₃ or SiO₂.

In the embodiment of FIGS. 7 and 8, the first coil 231 and the secondcoil 232 have the same structure as the embodiment shown in FIGS. 1 to6, so the same advantages are obtained. In addition, by having theadditional third coil 233, the number of coil turns is increased and amagneto motive force for a write operation is increased.

Further, another embodiment of a thin film magnetic head according tothe present invention is described with reference to FIGS. 9 and 10. InFIGS. 9 and 10, the same components as the components shown in FIGS. 1to 6 are given the same reference symbols. A thin film magnetic head ofthe illustrated embodiment comprises a first coil 231, a second coil232, a third coil 233 and a fourth coil 234. The first coil 231 and thesecond coil 232 have the same structure as the embodiment shown in FIGS.1 to 6.

The third coil 233 and the fourth coil 234 are provided above the firstcoil 231 and the second coil 232, insulated from the first coil 231 andthe second coil 232 by an insulating film 272, and surround in a spiralform a back gap piece 216 on the surface of the insulating film 272, andone of them is fitted into the space between coil turns of the other,insulated from the coil turns of the other by an insulating film 273.

In the fourth coil 234, the outermost coil turn of it is adjacent to thefirst pole portion P1 with the insulating film 273 and the innermostcoil turn is adjacent to the back gap piece 216 with the insulating film273.

In the thin film magnetic head of the above-mentioned aspect, the polepiece 213 forming the first pole portion P1, the back gap piece 217, thethird coil 233 and the fourth coil 234 provide the same action andeffect as those described with regard to the pole piece 212 forming thefirst pole portion P1, the back gap piece 216, the first coil 231 andthe second coil 232, and additionally the additional third and fourthcoils 233 and 234 increases the coil turns, thereby increasing a magnetomotive force for a write operation.

In the embodiment illustrated, the fourth coil 234 has a side surfacebeing adjacent to the pole piece 213 of the first pole portion P1 withthe insulating film 273, and another side surface being adjacent to theback gap piece 217 with the insulating film 273, each of the sidesurfaces having a taper angle making the sectional shape of the coilnarrower in the lower part and wider in the upper part. According tothis structure, since the fourth coil 234 adjacent to the pole piece 213of the pole portion P1 and the back gap piece 217 can be formed withoutmaking a keyhole, the reliability is improved.

Further, since the fourth coil 234 is separated from the pole piece 213of the pole portion P1 and the back gap piece 217 by the insulating film273 which can become a very thin film of about 0.1 μm in thickness byapplying CVD or the like, it is possible to shorten the yoke length YL,thereby providing improvement in high-frequency characteristic.

As a concrete aspect, the third coil 233 may have a taper angle makingits sectional shape wider in the lower part and narrower in the upperpart, and the fourth coil 234 may have a taper angle making itssectional shape narrower in the lower part and wider in the upper part.

According to this structure, by adopting a process of forming the fourthcoil 234 after forming the third coil 233, it is possible to avoidoccurrence of a keyhole when forming the fourth coil 234. Consequently,the reliability is improved.

It is preferable that the taper angles are equal to or more than 80degrees and less than 90 degrees in relation to one surface of theinsulating film 272. In this case, the third coil 233 is a plating filmand is formed on the insulating film 272. The fourth coil 234 is also aplating film and is formed on the insulating film 273 formed on thebottom face and both side faces of the space.

2. Method For Manufacturing A Thin Film Magnetic Head

(1) Embodiment 1

Embodiment 1 related to a manufacturing method is a process formanufacturing a thin film magnetic head of the first aspect having thefirst coil 231 and the second coil 232 (FIGS. 1 to 6). It is notified inadvance that processes illustrated in FIGS. 11 to 44 are performed on awafer.

First, referring to FIG. 11, on an insulating film 16 deposited on abase body 15 there are formed a first shield film 31, a read element 3,an insulating film 32, a second shield film 33, an insulating film 34and a first magnetic film 211 by means of publicly known processes.After that, an insulating film 251 is formed on the flat surface of thefirst magnetic film 211, the insulating film 251 having an area slightlylarger than an area necessary for forming a coil. On the surface of theinsulating film 251 there is formed a seed film 260. The seed film 260is formed so as to cover the surface of the insulating film 251 and thesurface of the first magnetic film 211. The seed film 260 is made of amaterial suitable for a Cu-plating ground, formed 50 nm to 80 nm thickby a Cu-CVD process.

Next, a photoresist film RS1 is formed on the seed film 260 by applyinga spin coat method or the like, and then is exposed with a mask MSKhaving a coil pattern and developed. The photoresist film RS1 may beeither positive photoresist or negative photoresist. In the embodiment,the case of using a positive photoresist is described as an example.

In the above-mentioned photolithography process, the depth of focus ofan exposure system (stepping projection aligner) is adjusted to beminus-focused, namely, positioned below the seed film. Due to this, thephotoresist film RS1 is exposed in such a manner that a wider area isexposed in the lower part of it and a narrower area is exposed in theupper part. The minus focus is set to be in the range of 0 to 0.5 μm orthe range of 0 to 1.2 μm, in relation to the surface of the seed film260.

By the above-mentioned exposure process and the following developmentprocess, a coil forming pattern S1 which is wider in the lower part andnarrower in the upper part is obtained as shown in FIG. 12. The coilforming pattern S1 is defined by a resist frame FR1.

Next, a selective Cu-plating process is performed, and thus a first coil231 is grown 3 to 3.5 μm thick on the seed film 260 present inside thecoil forming pattern S1. The first coil 231 is formed so that itssectional shape is wider in the lower part and narrower in the upperpart, corresponding to the shape of the coil forming pattern S1. FIG. 13shows a state in which the above-mentioned selective Cu-plating processhas been performed.

Next, the resist frame FR1 is removed by means of chemical etching orthe like, and after that a photolithography process for forming a polepiece and back gap piece is performed so that a resist frame for forminga pole piece and a back gap piece is formed. In this photolithographyprocess, the depth of focus of an exposure system is adjusted to beminus-focused, namely, positioned below the first magnetic film 211. Dueto this, the photoresist film RS1 is exposed in such a manner that awider area is exposed in the lower part of it and a narrower area isexposed in the upper part.

Next, a selective plating process is performed, and thus a pole pieceand a back gap piece are grown on the first magnetic film 211. Afterthat, the resist frame is removed by means of chemical etching or thelike. Consequently, as shown in FIG. 14, a pole piece 212 and a back gappiece 216 are formed with a space between them on one surface of thefirst magnetic film 211. The pole piece 212 and the back gap piece 216each are formed so that its sectional shape is wider in the lower partand narrower in the upper part. It is also possible to apply an ion beametching process to form the pole piece 212 and the back gap piece 216each having sectional shape that is wider in the lower part and narrowerin the upper part.

Next, as shown in FIG. 15, a photoresist film RS2 covering the firstcoil 231, the pole piece 212 and the back gap piece 216 is formed. Afterthat, a photolithography process is performed on the photoresist filmRS2 so that a resist cover FR2 covering the first coil and its peripheryis formed as shown FIG. 16. In addition, an insulating film 253 coveringthe whole resist cover FR2 is deposited. The insulating film 253 isformed 4 to 5 μm thick.

Next, the insulating film 253 and the resist cover FR2 are polished bychemical mechanical polishing (hereinafter, referred to as CMP) to beflattened. Alumina-based slurry is used in CMP. FIG. 17 shows a state inwhich the CMP process has been performed.

Next, the resist cover FR2 is removed and after that, as shown in FIG.18, an insulating film 252 is deposited on the surfaces and side facesof the insulating films 251 and 253, the first coil 231, the pole piece212 and the back gap piece 216. Concretely, the insulating film 252 isformed about 0.1 μm in thickness by an Al₂O₃-CVD process.

Next, as shown in FIG. 19, a seed film 261 is deposited 0.05 to 0.1 μmthick on the surface of the insulating film 252 by a Cu-CVD process.

Next, as shown in FIG. 20, a plating film 232 to become a second coil isformed 5 μm thick on the seed film 261. The plating film 232 comprisesCu as its main constituent.

Next, as shown in FIG. 21, the plating film 232 is polished by CMP to beflattened. Alumina-based slurry is used in the CMP. Consequently, thesecond coil 232 of a flat spiral pattern is obtained, insulated from thefirst coil 231 by the insulating film 252. In CMP, the surfaces of thepole piece 212, the back gap piece 216 and the insulating film 253 arealso polished so as to form the same plane as the surfaces of the firstcoil 231 and the second coil 232.

Next, as shown in FIG. 22, an insulating film 254 covering the surfacesof the first coil 231 and the second coil 232 is deposited. Theinsulating film 254 is made of Al₂O₃, formed 0.2 μm thick, for example.

Next, a photolithography process is performed on one surface where theinsulating film 254 has been formed, so that a resist frame for forminga connecting conductor 282 for connecting the inner end 281 of the firstcoil 231 with the outer end 283 of the second coil 232 (see FIG. 6) isformed. According to a pattern defined by the resist frame thusobtained, the connecting conductor 282 is formed by a frame platingmethod. Its thickness is 1.0 to 1.8 μm, for example.

Next, a photolithography process is performed on one surface where theconnecting conductor 282 has been formed, so that a resist frame forforming a pole piece 213 and a back gap piece 217 (see FIG. 7) isformed. According to a pattern defined by the resist frame thusobtained, the pole piece 213 and the back gap piece 217 are formed by aframe plating method as shown in FIG. 24. After the pole piece 213 andthe back gap piece 217 are formed, the resist frame is removed. FIG. 24shows a state in which the resist frame has been removed. The pole piece213 and the back gap piece 217 each are a plating film of CoFe or CoNiFeand are 1 to 2 μm thick, for example.

Next, as shown in FIG. 25, an insulating film 255 of Al₂O₃ is depositedon the surface where the pole piece 213 and the back gap piece 217 havebeen formed, the insulating film 255 being 2 to 3 μm thick, for example.After that, as shown in FIG. 26, the surfaces of the insulating film255, the pole piece 213, the back gap piece 217 and the connectingconductor 282 are polished by CMP. This CMP is performed so that thepole piece 213 and the back gap piece 217 are 0.2 to 0.6 μm thick, forexample.

Next, as shown in FIG. 27, a magnetic film 214 for forming a pole piece214 (see FIG. 3) is formed 0.5 μm thick on the polished surfaces of theinsulating film 255, the pole piece 213 and the back gap piece 217.

The magnetic film 214 can be made of CoFeN. Next, as shown in FIG. 28, aphotoresist film RS3 is formed on the surface of the magnetic film 214and then a photolithography process is performed. In thisphotolithography process, as shown in FIG. 29, the photoresist film RS3is patterned so that a T-shaped resist cover FR3 is left in the areaswhere a pole piece 213 and a back gap piece 217 are to be formed. Afterthat, an ion beam etching process is performed using the resist coverFR3 as a mask so that the magnetic film 214 is patterned. Consequently,the pole piece 214 and the back gap piece 218 are formed as shown inFIG. 29.

Next, as shown in FIG. 30, an insulating film 256 of Al₂O₃ is deposited0.6 μm thick by means of sputtering or the like. After that, the resistcover FR3 on the pole piece 214 and the back gap piece 218 is removedand, as shown in FIG. 31, the surfaces of the insulating film 256, thepole piece 214 and the back gap piece 218 are polished by CMP to beflattened more completely. This CMP is performed by such a small degreeas to produce a polishing quantity of 0.03 to 0.05 μm in thickness, forexample.

Next, as shown in FIG. 32, a patterned gap film 24 is formed on theflattened surface of the pole piece 214 and the flattened surface of theinsulating film 256. The gap film 24 is made of a non-magnetic materialsuch as Al₂O₃, Ru, NiCu or Ta, formed 0.1 μm thick, for example.

Next, as shown in FIG. 33, a magnetic film 223 is deposited so as tocover the surfaces of the gap film 24, the back gap piece 218 and theinsulating film 256. The magnetic film 223, which is for forming a polepiece 223 and a back gap piece 224, is made of a magnetic material suchas CoFeN, formed 0.2 to 0.6 μm thick, for example.

Next, as shown in FIG. 34, a T-shaped resist cover FR4 is formed on thesurface of the magnetic film 223 by a photolithography process. Theresist cover FR4 is formed so as to be positioned above the pole pieces212 to 214 and the back gap pieces 216 to 218. After that, an ion beametching process (IBE process) is performed so that shaped patterns of apole piece 223, a gap film 24 and a back gap piece 224 are obtained asshown in FIG. 35. This IBE process can be performed by applying ionbeams, for example, at 0 degree and 75 degrees so that the pole piece223 is etched by a depth of 0.3 to 0.6 μm, and further etched to exposethe gap film 24 or to expose the pole piece 214 positioned under the gapfilm 24. After that, as shown in FIG. 36, an insulating film 257 isdeposited so as to fill up the depth that has been etched by IBE.

Next, the resist cover FR4 is removed and then the surfaces of theinsulating film 257, the pole piece 223 and the back gap piece 224 arepolished within a range of 30 to 80 nm by CMP to be flattened. Afterthat, as shown in FIG. 37, a third magnetic film 222 of CoFeN or thelike is deposited 50 to 500 nm thick on the flattened surfaces by meansof sputtering or the like, and then the surface of the third magneticfilm 222, used as a seed film, is selectively plated with a secondmagnetic film 221 of CoNiFe. The plating thickness is 3.0 to 3.5 μm, forexample.

Next, the second magnetic film 221 is etched by IBE. By this etchingprocess, the second magnetic film 221 is made narrow in track width at asecond pole portion P2 as shown in FIG. 38.

Next, as shown in FIGS. 39 and 40, the third magnetic film 222, the polepiece 223 and the gap film 24 are etched by IBE. By this etchingprocess, the third magnetic film 222, the pole piece 223 and the gapfilm 24 are made narrow in track width as shown in FIG. 40.

Next, as shown in FIGS. 41 and 42, the pole piece 214 is etched by IBE.By this etching process, a part of the pole piece 214 adjacent to thegap film 24 is made narrow in track width as shown in FIG. 42. Theetching depth of the pole piece 214 is 0.3 to 0.35 μm, for example.

After that, as shown in FIGS. 43 and 44, a protective film 258 of Al₂O₃is deposited 20 to 40 μm thick.

The above-mentioned processes are performed on a wafer. After that,publicly known post-processes such as cutting out a bar-shaped headassembly from the wafer, polishing for determining a throat height, ABSprocessing and the like are performed. FIGS. 43 and 44 show a state inwhich polishing for determining a throat height has been performed.

Although described above with reference to the drawings showing aconcrete embodiment, it is apparent that the present invention is notlimited to such an embodiment. For example, the pole piece 213 includedin the first pole portion P1 may protrude over the second coil 232 ormay be equal to or longer than the pole piece 212 positioned beneath thepole piece 213. In the embodiment, the pole piece 214, the secondmagnetic film 221, and the third magnetic film 222 used as a seed filmof the second magnetic film 221 are made of CoFeN which is a highsaturation magnetic flux density material (2.4 tesla), but they may be asputtering film or a plating film containing FeCo (2.1 to 3 tesla). Inthe embodiment, when the pole piece 223 for determining a throat heightTH is etched by IBE, the pole piece 214 positioned beneath the gap film24 is etched to be 0.3 to 0.35 μm in depth (see FIGS. 41 and 42), butthe etching may be stopped in the middle of the gap film 24 or on thesurface of the pole piece 214.

There has been shown an example of providing a taper angle of 80 to 90degrees by controlling a focusing position in a photolithography processin order to provide the first coil 231 with a taper angle, but the sametaper angle may be provided by means of IBE. A process of providing thesecond coil 232 with a taper angle can be performed in the same manner.

(2) Embodiment 2

Embodiment 2 relates to a method for manufacturing a thin film magnetichead shown in FIGS. 7 and 8. FIGS. 45 to 68 show a process ofmanufacturing the same. It is notified in advance that processesillustrated in FIGS. 45 to 66 are also performed on a wafer.

First, referring to FIG. 45, a first shield film 31, a read element 3,an insulating film 32, a second shield film 33, an insulating film 34and a first magnetic film 211 are formed on an insulating film 16deposited to a base body 15 by means of publicly known processes. Afterthat, an insulating film 251 having an area slightly larger than an areanecessary for forming a coil is formed on the flat surface of the firstmagnetic film 211, and a seed film 260 is formed on the insulating film251. The seed film 260 is formed so as to cover the surface of theinsulating film 251 and the surface of the first magnetic film 211. Theseed film 260 is made of a material suitable for a Cu-plating groundfilm and is formed 50 nm to 80 nm thick by a Cu-CVD process.

Next, a photoresist film is formed on the seed film 260 by applying aspin coat method and the like, and then is exposed with a mask MSKhaving a coil pattern and developed. The photoresist film may be eitherpositive photoresist or negative photoresist. By performing developmentfollowing the above-mentioned exposure process, a resist frame FR5 isobtained as shown in FIG. 45. Next, a selective Cu-plating process isperformed, and thus a first coil 231 is grown 3 to 3.5 μm thick on theseed film 260 present inside the coil forming pattern. FIG. 45 shows astate in which the above-mentioned selective Cu-plating process has beenperformed.

Next, the resist frame FR5 is removed by means of chemical etching orthe like, and after that a photolithography process for forming a polepiece and back gap piece is performed so that a resist frame for forminga pole piece and a back gap piece is formed.

Next, a selective plating process is performed, and thus a pole pieceand a back gap piece are grown on the first magnetic film 211. Afterthat, the resist frame is removed by means of chemical etching or thelike. Consequently, as shown in FIG. 46, a pole piece 212 and a back gappiece 216 are formed with a space between them on one surface of thefirst magnetic film 211.

It is necessary that the first coil 231, the pole piece 212 and the backgap piece 216 each are formed so that its sectional shape is wider inthe lower part and narrower in the upper part. The taper angle is equalto or more than 80 degrees and less than 90 degrees in relation to thesurface of the first magnetic film 211 or the insulating film 251 formedthereon. As a means for achieving the above-mentioned taper angle, theembodiment 1 includes adjusting the depth of focus of an exposuresystem, but the embodiment 2 includes applying ion beam etching (IBE) toboth side faces of coil turns of the first coil 231, the pole piece 212and the back gap piece 216 so as to make their sectional shapes wider inthe lower parts and narrower in the upper parts. In the IBE process, ionbeams are applied onto one side face at 15 to 30 degrees, and onto theother side face at 20 to 47 degrees, preferably.

Next, as shown in FIG. 47, a photoresist film RS5 covering the firstcoil 231, the pole piece 212 and the back gap piece 216 is formed. Afterthat, the first magnetic film 211 is selectively etched by IBE using thephotoresist film RS5 as a mask.

Next, the resist cover FR5 is removed, and after that, as shown in FIG.48, an insulating film 252 is deposited on the surfaces and side facesof the insulating film 251, the first coil 231, the pole piece 212 andthe back gap piece 216. Concretely, the insulating film 252 is formed0.05 to 0.15 μm thick by an Al₂O₃-CVD process.

Next, as shown in FIG. 49, a seed film 261 is deposited 50 nm thick onthe surface of the insulating film 252 by Cu-sputtering.

Next, as shown in FIG. 50, a plating film 232 to become a second coil isformed 3 to 5 μm thick on the seed film 261 by a frame plating method.The plating film 232 comprises Cu as its main constituent.

Next, as shown in FIG. 51, an insulating film 253 of Al₂O₃ is formed soas to cover the plating film 232 and the area not covered with theplating film 232. The insulating film 253 is formed as a sputtering filmof 4 to 6 μm in thickness.

Next, as shown in FIG. 52, the insulating film 253 and the plating film232 are polished by CMP to be flattened. Consequently, the second coil232 of a flat spiral pattern is obtained, insulated from the first coil231 by the insulating film 252. In CMP, the surfaces of the pole piece212, the back gap piece 216 and the insulating film 253 are alsopolished so as to form the same plane as the surfaces of the first coil231 and the second coil 232.

Next, as shown in FIG. 53, an insulating film 254 covering the surfacesof the first coil 231 and the second coil 232 is deposited. Theinsulating film 254 is made of Al₂O₃, formed 0.2 μm thick, for example.

Next, as shown in FIG. 54, a photolithography process is performed onone surface where the insulating film 254 has been formed, and a resistframe plating method is subsequently performed so that a third coil 233is formed. A connecting conductor 282 is formed by a frame platingmethod. Its thickness is 1.5 to 2.5 μm, for example.

Next, a photolithography process is performed on one surface where theconnecting conductor 282 has been formed, so that a resist frame forforming a pole piece 213 and a back gap piece 217 (see FIGS. 7 and 8) isformed. According to a pattern defined by the resist frame thusobtained, the pole piece 213 and the back gap piece 217 are formed by aframe plating method as shown in FIG. 55. After the pole piece 213 andthe back gap piece 217 are formed, the resist frame is removed. FIG. 55shows a state in which the resist frame has been removed. The pole piece213 and the back gap piece 217 each are a plating film of CoFe or CoNiFe(2.1 to 2.3 tesla) and are 2 to 3 μm thick, for example.

Next, as shown in FIG. 56, an insulating film 271 made of photoresist isformed in the space between coil turns of the third coil 233.

Next, as shown in FIG. 57, an insulating film 255 of Al₂O₃ is deposited3 to 4 μm thick on the surface where the pole piece 213 and the back gappiece 217 have been formed. After that, as shown in FIG. 58, thesurfaces of the insulating film 255, the pole piece 213 and the back gappiece 217 are polished by CMP.

Next, as shown in FIG. 59, a magnetic film 214 for forming a pole piece214 (see FIGS. 7 and 8) is formed 0.3 to 0.6 μm thick on the polishedsurfaces of the insulating film 255, the pole piece 213 and the back gappiece 217. The magnetic film 214 can be made of CoFeN (2.4 tesla). Afterthat, a photolithography process is performed on the surface of themagnetic film 214. In this photolithography process, a T-shaped resistcover FR6 is formed above the pole piece 213 and the back gap piece 217,as shown in FIG. 60. After that, an ion beam etching process isperformed using the resist cover FR6 as a mask so that the magnetic film241 is patterned. Consequently, a pole piece 214 and a back gap piece218 are formed as shown in FIG. 60.

Next, ion beam etching is applied onto both sides of the pole piece 214and the back gap piece 218, ion beams applied onto one side at 0 degreeand onto the other side at 75 degrees. After that, as shown in FIG. 61,an insulating film 256 of Al₂O₃ is deposited 0.3 to 0.7 μm thick bymeans of sputtering or the like. After that, the resist cover FR6 on thepole piece 214 and the back gap piece 218 is removed by a lift-offmethod or the like. After that, the surfaces of the insulating film 256,the pole piece 214 and the back gap piece 218 are polished by CMP to bemore completely flattened. This CMP is performed by such a small degreeas to produce a polishing quantity of 3 to 5 nm in thickness, forexample.

Next, as shown in FIG. 62, a patterned gap film 24 is formed on theflattened surface of the pole piece 214 and the flattened surface of theinsulating film 256. The gap film 24 is made of a non-magnetic materialsuch as Al₂O₃, Ru, NiCu or Ta, formed 0.1 μm thick, for example.

Next, as shown in FIG. 63, a magnetic film 222 is deposited bysputtering so as to cover the surfaces of the gap film 24, the back gappiece 218 and the insulating film 256. The magnetic film 222 is made ofa magnetic material such as CoFeN (2.4 tesla), formed 0.2 to 0.6 μmthick, for example.

Next, as shown in FIGS. 64 and 65, a second magnetic film 221 is formedon the surface of the magnetic film 222. The second magnetic film 221 isformed 3.0 to 3.5 μm thick by a frame plating method.

Next, IBE is applied to a third magnetic film 222 using the secondmagnetic film 221 as a mask so that the third magnetic film 222 has anarrow track width. The pole piece 214 of the first pole portion P1 istrimmed at a depth of 0.25 to 0.35 μm, and then a protective film 258 isdeposited 20 to 40 μm thick thereon, as shown in FIGS. 66 and 67. Theprotective film 258 can be deposited by sputtering.

The above-mentioned processes are performed on a wafer. After that,publicly known post-processes such as cutting out a bar-shaped headassembly from the wafer, polishing for determining a throat height, ABSprocessing and the like are performed. FIGS. 66 and 67 show a state inwhich polishing for determining a throat height has been performed.

(3) Embodiment 3

Embodiment 3 is a process of manufacturing a thin film magnetic headshown in FIGS. 9 and 10, and is illustrated in FIGS. 68 to 78. Processeswhich have been illustrated and described in embodiment 1 or 2 and areused also in embodiment 3 are referred to the description of embodiment1 or 2 and the illustrations of the processes may be omitted.

(A) Process Leading to a State of FIG. 68

FIG. 68 shows a state in which the manufacturing processes shown inFIGS. 45 to 52 have been performed. In the state of FIG. 68, a flatspiral pattern of the second coil 232 is obtained by CMP, insulated fromthe first coil 231 by the insulating film 252. And the surfaces of thepole piece 212, the back gap piece 216 and the insulating film 253 arepolished so as to form the same plane as the surfaces of the first coil231 and the second coil 232.

(B) Process Leading to a State of FIG. 69

FIG. 69 shows a state in which the third coil 233, the pole piece 213and the back gap piece 217 have been formed on the surface flattened bythe process shown in FIG. 68. The third coil 233, the pole piece 213 andthe back gap piece 217 can be formed by applying the processesillustrated and described in FIGS. 11 to 14 (embodiment 1) or theprocesses illustrated and described in FIGS. 45 and 46 (embodiment 2).

In case of using the processes shown in FIGS. 11 to 14, first aninsulating film 272 is formed on the flattened surface so as to have anarea slightly larger than an area necessary for forming a coil, and aseed film is formed on the surface of the insulating film 272 and theflattened surface. The seed film is made of a material suitable for aCu-plating ground film and is formed 50 nm to 80 nm thick by a Cu-CVDprocess.

Next, a photoresist film is formed on the seed film by applying a spincoat method and the like, and then is exposed with a mask MSK having acoil pattern and developed. The photoresist film may be either positivephotoresist or negative photoresist.

In the above-mentioned photolithography process, the depth of focus ofan exposure system (stepper) is adjusted so as to be positioned belowthe seed film, namely, minus-focused. Due to this, the photoresist filmis exposed in such a manner that a wider area is exposed in the lowerpart of it and a narrower area is exposed in the upper part. The minusfocus is set to be in a range of 0 to 0.5 μm or in a range of 0 to 1.2μm, in relation to the surface of the seed film (see FIG. 11).

By the above-mentioned exposure process and the following developmentprocess, a coil forming pattern which is wider in the lower part andnarrower in the upper part is obtained. The coil forming pattern isdefined by a resist frame (see FIG. 12).

Next, a selective Cu-plating process is performed, and thus a third coil233 is grown 3 to 3.5 μm thick on the seed film present inside the coilforming pattern S1. The third coil 233 is formed so that its sectionalshape is wider in the lower part and narrower in the upper part,corresponding to the shape of the coil forming pattern.

Next, the resist frame, which has been used for forming the third coil233, is removed by means of chemical etching or the like, and after thata photolithography process for forming a pole piece and back gap pieceis performed so that a resist frame for forming a pole piece and a backgap piece is formed. In this photolithography process, the depth offocus of an exposure system is adjusted to be minus-focused as describedabove. Due to this, the photoresist film is exposed in such a mannerthat a wider area is exposed in the lower part of it and a narrower areais exposed in the upper part.

Next, a selective plating process is performed so that a pole piece 213is grown on the pole piece 212 and a back gap piece 217 is grown on theback gap piece 216 as shown in FIG. 69. The pole piece 213 and the backgap piece 217 each are formed so that its sectional shape is wider inthe lower part and narrower in the upper part.

In case of adopting the processes shown in FIGS. 45 and 46, aphotoresist film is formed on the seed film and then is exposed with amask having a coil pattern and developed, so a resist frame is formed. Aselective Cu-plating process is performed by the resist frame thusobtained so that a third coil 233 is grown 3 to 3.5 μm thick on the seedfilm present inside the coil forming pattern (see FIG. 45).

Next, the resist frame is removed by means of chemical etching or thelike, and after that a photolithography process for forming a pole pieceand back gap piece is performed so that a resist frame for forming apole piece and a back gap piece is formed.

Next, a selective plating process is performed so that a pole piece 213is grown on the pole piece 212 and a back gap piece 217 is grown on theback gap piece 216. After that, the resist frame is removed by means ofchemical etching or the like.

It is necessary that the third coil 233, the pole piece 213 and the backgap piece 217 each are formed so that its sectional shape is wider inthe lower part and narrower in the upper part. The taper angle is equalto or more than 80 degrees and less than 90 degrees in relation to theflattened surface or the surface of the insulating film 272. As a meansfor achieving the above-mentioned taper angle, ion beam etching (IBE) isapplied to both side faces of coil turns of the third coil 233, the polepiece 213 and the back gap piece 217 so as to make their sectionalshapes wider in the lower parts and narrower in the upper parts (seeFIG. 46). In the IBE process, ion beams are applied onto one side faceat 15 to 30 degrees and onto the other side face at 20 to 47 degrees.

(C) Process Leading to a State of FIG. 70

FIG. 70 shows a state in which an insulating film 273 has been depositedon the surfaces and side faces of the insulating film 272, the thirdcoil 233, the pole piece 213 and the back gap piece 217. The insulatingfilm 273, which is formed by an Al₂O₃-CVD process, is formed 0.05 to0.15 μm thick.

(D) Process Leading to a State of FIG. 71

FIG. 71 shows a state in which the third coil 233, fourth coil 234, seedfilm 262, insulating films 273 and 274, pole piece 213 and back gappiece 217 have been formed above the first coil 231 and the second coil232, insulated from the first coil 231 and the second coil 232 by theinsulating film 272, and the surfaces thereof have been polished by CMPto be flattened. A process leading from the state of FIG. 70 to thestate of FIG. 71 is substantially the same as the process shown in FIGS.49 to 52.

That is to say, an insulating film 273 is deposited on the surfaces andside faces of the insulating film 272, the third coil 233, the polepiece 213 and the back gap piece 217, and then a seed film 262 isdeposited 50 nm thick by Cu-sputtering (see FIG. 49).

Next, a plating film to become a fourth coil 234 is formed 3 to 5 μmthick on the seed film 262 by a frame plating method (see FIG. 50). Theplating film comprises Cu as its main constituent.

Next, an insulating film 274 of Al₂O₃ is formed so as to cover an areanot covered with the plating film and the surface of the plating film(see FIG. 51). The insulating film 274 is formed as a sputtering film of4 to 6 μm in thickness.

Next, the insulating film 274 and the plating film 234 are polished byCMP to be flattened (see FIG. 52). Consequently, the fourth coil 234 ofa flat spiral pattern is obtained, insulated from the third coil 233 bythe insulating film 273. In CMP, the surfaces of the pole piece 213, theback gap piece 217 and the insulating film 274 are also polished so asto form the same plane as the surfaces of the third coil 233 and thefourth coil 234. Thus the state shown in FIG. 71 is obtained.

(E) Process Leading to a State of FIG. 72

FIG. 72 shows a state in which the surfaces of the third coil 233,fourth coil 234, seed film 262, insulating films 273 and 274, pole piece213 and back gap piece 217 have been polished by CMP to be flattened, apatterned insulating film 254 has been deposited on the flattenedsurfaces, a pole piece 214 has been deposited on the pole piece 213, aback gap piece 218 has been deposited on the back gap piece 217, and thevicinity of the pole piece 214 and the back gap piece 218 have beenfilled up with an insulating film 255.

The process leading from the state of FIG. 71 to the state of FIG. 72 issubstantially the same as the process of FIGS. 22 to 26 of embodiment 1.

That is to say, an insulating film 254 is deposited so as to cover thesurfaces of the third coil 233 and the fourth coil 234 (see FIG. 22).The insulating film 254 is made of Al₂O₃, formed 0.2 μm thick, forexample.

Next, a photolithography process is performed on one surface where theinsulating film 254 has been formed, so that a resist frame for forminga pole piece 214 and a back gap piece 218 is formed. According to apattern defined by the resist frame thus obtained, the pole piece 214and the back gap piece 218 are formed by a frame plating method (seeFIG. 24). After the pole piece 214 and the back gap piece 218 areformed, the resist frame is removed. The pole piece 214 and the back gappiece 218 each are a sputtering film of CoNiFe (2.4 tesla) and are 0.3to 0.6 μm thick, for example.

Next, an insulating film 255 of Al₂O₃ is deposited on the surface wherethe pole piece 214 and the back gap piece 218 have been formed, theinsulating film 255 being 1 to 21 μm thick, for example (see FIG. 25).After that, the surfaces of the insulating film 255, the pole piece 214and the back gap piece 218 are polished by CMP (see FIG. 26). This CMPis performed so that the pole piece 214 and the back gap piece 218 are0.5 μm or more in thickness, for example.

(F) Process Leading to a State of FIG. 73

A process leading from the state of FIG. 72 to the state of FIG. 73 issubstantially the same as the process of FIGS. 27 to 35 of embodiment 1.

That is to say, a magnetic film 215 for forming a pole piece 215 isformed 0.5 μm thick on the polished surfaces of the insulating film 255,the pole piece 214 and the back gap piece 218 (see FIG. 27). Themagnetic film 215 can be made of CoFeN.

Next, a photoresist film is deposited on the surface of the magneticfilm 215 and then a photolithography process is performed (see FIG. 28).In this photolithography process, the photoresist film is patterned sothat a T-shaped resist cover is left on the pole piece 214 and the backgap piece 218 (see FIG. 29). After that, a magnetic film 215 ispatterned by ion beam etching using the resist cover as a mask.Consequently, a pole piece 215 and a back gap piece 219 are formed.Next, an insulating film 256 of Al₂O₃ is deposited 0.6 μm thick by meansof sputtering or the like (see FIG. 30). After that, the resist cover onthe pole piece 215 and the back gap piece 219 is removed and thesurfaces of the insulating film 256, the pole piece 215 and the back gappiece 219 are polished by CMP to be more completely flattened (see FIG.31). This CMP is performed by such a small degree as to produce apolishing quantity of 0.03 to 0.05 μm in thickness, for example.

Next, a patterned gap film 24 is formed on the flattened surface of thepole piece 215 and the flattened surface of the insulating film 256 (seeFIG. 32). The gap film 24 is made of a non-magnetic material such asAl₂O₃, Ru, NiCu or Ta, formed 0.1 μm thick, for example.

Next, a magnetic film 223 is deposited so as to cover the surfaces ofthe gap film 24, the back gap piece 219 and the insulating film 256 (seeFIG. 33). The magnetic film 223, which is for forming a pole piece 223and a back gap piece 224, is made of a magnetic material such as CoFeN,formed 0.2 to 0.6 μm thick, for example.

Next, a T-shaped resist cover is formed on the surface of the magneticfilm 223 by a photolithography process (see FIG. 34). The resist coveris formed so as to be positioned above the pole pieces 212 to 215 andthe back gap pieces 216 to 219. After that, an ion beam etching process(IBE process) is performed so that shaped patterns of a pole piece 223,a gap film 24 and a back gap piece 224 are obtained (see FIG. 35). ThisIBE process can be performed by applying ion beams, for example, at 0degree and 75 degrees so that the pole piece 223 is etched by a depth of0.3 to 0.6 μm, and further etched to expose the gap film 24 or to exposethe pole piece 214 positioned under the gap film 24. After that, aninsulating film 257 is deposited so as to fill up the depth etched byIBE, and then the state of FIG. 73 is brought. In FIG. 73, a resistcover FR7 is formed above the pole pieces 212 to 215 and the back gappieces 216 to 219.

(G) Process Leading to a State of FIG. 74

In the process leading from the state of FIG. 73 to the state of FIG.74, the resist cover FR7 is removed. The surface from which the resistcover FR7 has been removed is polished by CMP to be flattened. This CMPis performed by such a small degree as to produce a polishing quantityof 30 to 70 nm. FIG. 74 shows a state in which the polishing by CMP hasbeen performed.

(H) Process Leading to a State of FIGS. 75 and 76

The process leading from the state of FIG. 74 to the state of FIGS. 75and 76 includes the process shown in FIG. 37 of embodiment 1.

First, a third magnetic film 222 of CoFeN or the like is deposited 50 to500 nm thick on the flattened surfaces by means of sputtering or thelike, and then the surface of the third magnetic film 222, used as aseed film, is selectively plated with a second magnetic film 221 ofCoNiFe (see FIG. 37). The plating thickness is 3.0 to 3.5 μm, forexample.

After that, as shown in FIG. 75, the tips of pole pieces 221 and 222formed of the second magnetic film 221 and the third magnetic film 222are trimmed by ion beam etching (IBE), and then the whole secondmagnetic film 221 except a part to be the pole piece 221 is covered witha photoresist FR8, and the third magnetic film 222, the pole piece 223,the gap film 24 and the pole piece 214 are etched by IBE. By this IBEprocess, the third magnetic film 222, the pole piece 223, the gap film24 and the pole piece 214 are made narrow in track width as shown inFIG. 76. The depth of etching the pole piece 214 is determined to be ina range of 0.3 to 0.35 μm, for example.

Because the whole second magnetic film 221 except the part to be a polepiece 221 is covered with the photoresist FR8, the second magnetic film221 are made to have a low area at the pole part and a high area notetched at the other part. Consequently, a side write phenomenon and aside erase phenomenon are reduced.

After that, as shown in FIGS. 77 and 78, the photoresist FR8 is removedand a protective film 258 is deposited, so the process is completed.

(4) Another Example of Providing a Taper Angle

As a means for providing the second coil 232 or the fourth coil 234 witha taper angle, embodiments 1 to 3 includes: providing the first coil 231or the third coil 233 with a taper angle; and forming the second coil232 or the fourth coil 234 according to the taper angle the first coil231 or the third coil 233 thereby producing a taper angle of the secondcoil 232 or the fourth coil 234. FIGS. 79 to 83 show a process forproviding a taper angle other than that of embodiments 1 to 3.

First, as shown in FIG. 79, an insulating film 251 is formed on thesurface of a magnetic film 211, and a first coil 231 (or a third coil)is formed on the insulating film 251 by a photolithography process. Anda coil piece 212 and a back gap piece 216 are formed on the surface ofthe first magnetic film 211 by a photolithography process. Details ofthe photolithography process in this case are as described withreference to FIG. 45 and the like.

Next, as shown in FIG. 80, an insulating film 252 is deposited on thesurfaces and side faces of the insulating film 251, first coil 231, polepiece 212 and back gap piece 216. The insulating film 252 is formedabout 0.1 μm in thickness by an Al₂O₃-CVD process.

Next, a Cu-sputtering film is formed 50 nm thick on the surface of theinsulating film 252, and then a seed film 261 is formed 50 to 150 nmthick thereon by a Cu-CVD process.

Next, as shown in FIG. 81, ion beams are applied aslant from above sothat the seed film 261 is etched, the opening of the seed film becominglarger in the upper part. It is preferable that the ion beamirradiations are performed at least twice. In this case, ion beams areapplied at 0 to 40 degrees in the first irradiation and at 40 to 70degrees in the second irradiation. These irradiations make the seed film261 etched more greatly at a position closer to the opening end, andconsequently a taper angle is achieved. The ion beam irradiations mustbe performed so as not to cut the seed film 261.

Next, as shown in FIG. 82, a Cu-plating film 232 for forming a secondcoil is formed 4 to 5 μm thick, for example. Since the seed film 261 isprovided with a taper angle making the opening larger at a positioncloser to the opening end, the Cu-plating film 232 can be formed withoutmaking a keyhole.

Next, as shown in FIG. 83, the Cu-plating film 232 is polished by CMP tobe flattened. In the CMP, alumina-based slurry is used. Consequently,the second coil 232 of a flat spiral pattern is obtained, insulated fromthe first coil 231 by the insulating film 252. In the CMP, the surfacesof the pole piece 212 and the back gap piece 216 are also polished so asto form the same plane as the surfaces of the first coil 231 and thesecond coil 232.

The processes of FIGS. 79 to 83 may also be applied to the case offorming a third coil 233 and a fourth coil 234. Processes after theprocess of FIG. 83 are as described in embodiments 1 to 3.

3. Magnetic Head Device and Magnetic Recording/reproducing Apparatus

The present invention also provides a magnetic head device and amagnetic recording/reproducing apparatus. Referring to FIGS. 84 and 85,a magnetic head device according to the present invention comprises athin film magnetic head 400 shown in FIGS. 1 to 10 and a head supportingdevice 6. The structure of the head supporting device 6 is as follows: aflexible member 62 made of a metal sheet is attached to a free end of asupporting member 61 made of a metal sheet, the free end being at oneend in the longitudinal direction; and the thin film magnetic head 400is attached to the lower surface of the flexible member 62.

In specific terms, the flexible member 62 has: two outer frame portions621 and 622 extending nearly in parallel with the longitudinal axialline of the supporting member 61; a lateral frame 623 for connecting theouter frame portions 621 and 622 at the end which is distant from thesupporting member 61; and a tongue-shaped piece 624 extending nearlyfrom the middle part of the lateral frame 623 nearly in parallel withthe outer frame portions 621 and 622 and having a free end at the tip.One end of the flexible member 62 opposite to the lateral frame 623 isjoined to the vicinity of the free end of the supporting member 61 bymeans of welding or the like.

The lower face of the supporting member 61 is provided with a loadingprojection 625 in the shape of a hemisphere, for example. This loadingprojection 625 transmits load from the free end of the supporting member61 to the tongue-shaped piece 624.

The thin film magnetic head 400 is joined to the lower surface of thetongue-shaped piece 624 by means of adhesion or the like. The thin filmmagnetic head 400 is supported so as to allow pitching and rollingactions.

A head supporting device to which the present invention is applied isnot limited to the above-described embodiment. The present invention canalso be applied to head supporting devices which have been proposedbefore or will be proposed in the future. For example, the presentinvention can be applied to a head supporting device obtained byintegrating the supporting member 61 and the tongue-shaped piece 624 bya flexible high-molecular wiring sheet such as a TAB tape (TAB: tapeautomated bonding), and a head supporting device having a publicly knownconventional gimbals structure.

Next, referring to FIG. 86, a magnetic recording/reproducing apparatusaccording to the present invention comprises a magnetic disk 71 providedso as to be capable of turning around an axis 70, a thin film magnetichead 72 for recording and reproducing information on the magnetic disk71 and an assembly carriage device 73 for positioning the thin filmmagnetic head 72 on a track of the magnetic disk 71.

The assembly carriage device 73 comprises a carriage 75 capable ofturning around an axis 74 and an actuator 76 composed of, for example, avoice coil motor (VCM) for turning this carriage 75, as main components

The base portion of a plurality of driving arms 77 stacked in the axialdirection of the axis 74 is attached to the carriage 75, and a headsuspension assembly 78 with a thin film magnetic head 72 is fixedlyjoined to the tip of each driving arm 77. Each head suspension assembly78 is joined to the tip of a driving arm 77 so that a thin film magnetichead 72 on the tip of the head suspension assembly 78 faces the surfaceof each magnetic disk 71.

The driving arm 77, head suspension assembly 78 and thin film magnetichead 72 form the magnetic head device described with reference to FIGS.84 and 85. The thin film magnetic head 72 has the structure shown inFIGS. 1 to 10. Thus, the magnetic recording/reproducing apparatus shownin FIG. 86 exhibits the action and effect described with reference toFIGS. 1 to 10.

Although the contents of the present invention have been concretelydescribed above with reference to the preferred embodiments, it isself-evident that people in this field can take various variations onthe basis of the basic technical idea and teachings of the presentinvention.

1. A thin film magnetic head comprising a write element, wherein: saidwrite element comprises a first magnetic film, a pole portion, a secondmagnetic film, a gap film, a first coil and a second coil; said firstmagnetic film has one flat surface; said pole portion comprises a firstpole portion and a second pole portion; said first pole portionincluding at least one pole piece film lying on said flat surface ofsaid first magnetic film, said at least one pole piece film having anupper end part narrowed to define a track width; said second poleportion faces said first pole portion with said gap film between them;said second magnetic film is connected to said second pole portion andis joined to said first magnetic film by a back gap portion that isrecessed in the thin film magnetic head from the medium-facing surface;said first coil and said second coil surround in a spiral form said backgap portion on said flat surface of said first magnetic film, and one ofsaid first and second coils is fitted into a space between coil turns ofthe other, insulated from the coil turns of the other coil and the atleast one pole piece film by an insulating film, and said first andsecond coils are connected to each other so as to generate magnetic fluxin the same direction; one of said first coil and said second coil hascoil turns with generally planar side surfaces extending generallytransverse to the planes of the first magnetic film and one pole piecefilm wherein said side surfaces have taper angles making the sectionalshape of the coil turns narrower in the lower part and wider in theupper part; and upper surfaces of said first and second coils form thesame plane.
 2. A thin film magnetic head according to claim 1, wherein:said first coil has a taper angle making its sectional shape wider inthe lower part and narrower in the upper part; and said second coil hasa taper angle making its sectional shape narrower in the lower part andwider in the upper part and has the outermost coil turn adjacent to saidpole portion and said back gap portion.
 3. A thin film magnetic headaccording to claim 2, wherein: said taper angles are equal to or morethan 80 degrees and less than 90 degrees in relation to said flatsurface of said first magnetic film.
 4. A thin film magnetic headaccording to claim 3, wherein: said first coil is a plating film and isformed on a first insulating film formed on said flat surface of saidfirst magnetic film; and said second coil is a plating film and isformed on said second insulating film in said space, and said secondinsulating film is formed on the bottom face and both side faces of saidspace.
 5. A thin film magnetic head according to claim 1, furthercomprising a third coil and a fourth coil, wherein: said third coil andsaid fourth coil are provided above said first coil and said secondcoil, insulated from said first coil and said second coil by a thirdinsulating film, and said third and fourth coils surround in a spiralform a back gap portion connected to said back gap portion on thesurface of said third insulating film, and one of said third and fourthcoils is fitted into the space between coil turns of the other,insulated from the coil turns of the other by a fourth insulating film;the outermost coil turn of said third coil or said fourth coil isadjacent to said pole portion with said fourth insulating film; and theinnermost coil turn of said third coil or said fourth coil is adjacentto said back gap portion with said fourth insulating film.
 6. A thinfilm magnetic head according to claim 5, wherein: the outermost coilturn of said third coil or said fourth coil has a side surface beingadjacent to said pole portion with said fourth insulating film, and theinnermost coil turn of said third coil or said fourth coil has a sidesurface being adjacent to said back gap portion with said fourthinsulating film, and each of said side surfaces has a taper angle makingthe sectional shape of the coil turn narrower in the lower part andwider in the upper part.
 7. A thin film magnetic head according to claim6, wherein: said third coil has a taper angle making its sectional shapewider in the lower part and narrower in the upper part; and said fourthcoil has a taper angle making its sectional shape narrower in the lowerpart and wider in the upper part and has the outermost coil turnadjacent to said pole portion and said back gap portion.
 8. A thin filmmagnetic head according to claim 7, wherein: said taper angles are equalto or more than 80 degrees and less than 90 degrees in relation to saidsurface of said third magnetic film.
 9. A thin film magnetic headaccording to claim 8, wherein: said third coil is a plating film and isformed on said third insulating film; and said fourth coil is a platingfilm and is formed on said fourth insulating film in said space, andsaid fourth insulating film is formed on the bottom face and both sidefaces of said space.
 10. A thin film magnetic head according to claim 1,further comprising a read element, wherein: said read element comprisesa giant magnetoresistance effect element.
 11. A thin film magnetic headaccording to claim 10, wherein: said giant magnetoresistance effectelement includes one of a spin valve film and a ferromagnetic tunneljunction.
 12. A magnetic recording/reproducing apparatus comprising athin film magnetic head and a magnetic recording medium, said thin filmmagnetic head comprising a write element, wherein: said write elementcomprises a first magnetic film, a pole portion, a second magnetic film,a gap film, a first coil and a second coil; said first magnetic film hasone flat surface; said pole portion comprises a first pole portion and asecond pole portion; said first pole portion including at least one polepiece film lying on said flat surface of said first magnetic film, saidat least one pole piece film having an upper end part narrowed to definea track width; said second pole portion faces said first pole portionwith said gap film between them; said second magnetic film is connectedto said second pole portion and is joined to said first magnetic film bya back gap portion that is recessed in the thin film magnetic head fromthe medium-facing surface; said first coil and said second coil surroundin a spiral form said back gap portion on said flat surface of saidfirst magnetic film, and one of said first and second coils is fittedinto a space between coil turns of the other, insulated from the coilturns of the other coil and the at least one pole piece film by aninsulating film, and said first and second coils are connected to eachother so as to generate magnetic flux in the same direction; one of saidfirst coil and said second coil has coil turns with generally planarside surfaces extending generally transverse to the planes of the firstmagnetic film and one pole piece film wherein said side surfaces havetaper angles making the sectional shape of the coil turn narrower in thelower part and wider in the upper part; upper surfaces of said first andsecond coils form the same plane; and said magnetic recording mediumperforms magnetic recording/reproducing operations in cooperation withsaid thin film magnetic head.
 13. A magnetic recording/reproducingapparatus according to claim 12, wherein: said first coil has a taperangle making its sectional shape wider in the lower part and narrower inthe upper part; and said second coil has a taper angle making itssectional shape narrower in the lower part and wider in the upper partand has the outermost coil turn adjacent to said pole portion and saidback gap portion.
 14. A magnetic recording/reproducing apparatusaccording to claim 13, wherein: said taper angles are equal to or morethan 80 degrees and less than 90 degrees in relation to said flatsurface of said first magnetic film.
 15. A magneticrecording/reproducing apparatus according to claim 14, wherein: saidfirst coil is a plating film and is formed on a first insulating filmformed on said flat surface of said first magnetic film; and said secondcoil is a plating film and is formed on said second insulating film insaid space, and said second insulating film is formed on the bottom faceand both side faces of said space.
 16. A magnetic recording/reproducingapparatus according to claim 12, further comprising a third coil and afourth coil, wherein: said third coil and said fourth coil are providedabove said first coil and said second coil, insulated from said firstcoil and said second coil by a third insulating film, and said third andfourth coils surround in a spiral form a back gap portion connected tosaid back gap portion on the surface of said third insulating film, andone of said third and fourth coils is fitted into the space between coilturns of the other, insulated from the coil turns of the other by afourth insulating film; the outermost coil turn of said third coil orsaid fourth coil is adjacent to said pole portion with said fourthinsulating film; and the innermost coil turn of said third coil or saidfourth coil is adjacent to said back gap portion with said fourthinsulating film.
 17. A magnetic recording/reproducing apparatusaccording to claim 16, wherein: the outermost coil turn of said thirdcoil or said fourth coil has a side surface being adjacent to said poleportion with said fourth insulating film, and the innermost coil turn ofsaid third coil or said fourth coil has a side surface being adjacent tosaid back gap portion with said fourth insulating film, and each of saidside surfaces has a taper angle making the sectional shape of the coilturn narrower in the lower part and wider in the upper part.
 18. Amagnetic recording/reproducing apparatus according to claim 17, wherein:said third coil has a taper angle making its sectional shape wider inthe lower part and narrower in the upper part; and said fourth coil hasa taper angle making its sectional shape narrower in the lower part andwider in the upper part and has the outermost coil turn adjacent to saidpole portion and said back gap portion.
 19. A magneticrecording/reproducing apparatus according to claim 18, wherein: saidtaper angles are equal to or more than 80 degrees and less than 90degrees in relation to said surface of said third magnetic film.
 20. Amagnetic recording/reproducing apparatus according to claim 19, wherein:said third coil is a plating film and is formed on said third insulatingfilm; and said fourth coil is a plating film and is formed on saidfourth insulating film in said space, and said fourth insulating film isformed on the bottom face and both side faces of said space.
 21. Amagnetic recording/reproducing apparatus according to claim 12, furthercomprising a read element, wherein: said read element comprises a giantmagnetoresistance effect element.
 22. A magnetic recording/reproducingapparatus according to claim 21, wherein: said giant magnetoresistanceeffect element includes one of a spin valve film and a ferromagnetictunnel junction.